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APT20M11JVFR|MICROCHP|simage
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MOSFETs

APT20M11JVFR

Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    200
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    175
  • Maximum Drain-Source Resistance (mOhm)
    11@10V
  • Typical Gate Charge @ Vgs (nC)
    690@10V
  • Typical Gate Charge @ 10V (nC)
    690
  • Typical Input Capacitance @ Vds (pF)
    18000@25V
  • Maximum Power Dissipation (mW)
    700000
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    40
  • Typical Turn-Off Delay Time (ns)
    75
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Screw
  • Package Height
    9.6(Max)
  • Package Width
    25.4(Max)
  • Package Length
    38.2(Max)
  • PCB changed
    4
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-227
  • Pin Count
    4
  • Lead Shape
    Screw
Order Quantity

Documentation and Resources

Datasheets
Design resources