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APT200GN60J|MICROCHP|simage
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IGBT Modules

APT200GN60J

Trans IGBT Module N-CH 600V 283A 682W 4-Pin SOT-227 Tube

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.75
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single Dual Emitter
  • Maximum Collector-Emitter Voltage (V)
    600
  • Maximum Power Dissipation (mW)
    682
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Continuous DC Collector Current (A)
    283
  • Maximum Gate Emitter Leakage Current (uA)
    0.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Screw
  • Package Height
    9.6(Max)
  • Package Width
    25.04(Max)
  • Package Length
    38.2(Max)
  • PCB changed
    4
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-227
  • Pin Count
    4
Order Quantity

Documentation and Resources

Datasheets
Design resources