Product Technical Specifications
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.41.00.00
Automotive
No
PPAP
No
Type
Chip
Phototransistor Type
Phototransistor
Lens Shape Type
Flat
Material
Silicon
Number of Channels per Chip
1
Polarity
NPN
Viewing Orientation
Side View
Peak Wavelength (nm)
940
Maximum Rise Time (ns)
15000(Typ)
Maximum Fall Time (ns)
15000(Typ)
Maximum Collector Current (mA)
0.3(Typ)
Maximum Dark Current (nA)
100
Maximum Emitter-Collector Voltage (V)
5
Maximum Collector-Emitter Voltage (V)
30
Maximum Collector-Emitter Saturation Voltage (V)
0.8
Maximum Power Dissipation (mW)
100
Fabrication Technology
NPN Transistor
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1
Package Width
2
Package Length
3
PCB changed
2
Supplier Package
SMD
Pin Count
2