Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
EA
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
800
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
7.4
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1630@10V
Typical Gate Charge @ Vgs (nC)
26@10V
Typical Gate Charge @ 10V (nC)
26
Typical Input Capacitance @ Vds (pF)
1375@25V
Maximum Power Dissipation (mW)
245000
Typical Fall Time (ns)
41
Typical Rise Time (ns)
51
Typical Turn-Off Delay Time (ns)
69
Typical Turn-On Delay Time (ns)
35
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
9.14
Package Width
4.45
Package Length
10.03
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3

