Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.4
Maximum Continuous Drain Current (A)
70
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
10@10V
Typical Gate Charge @ Vgs (nC)
16.5@4.5V|37@10V
Typical Gate Charge @ 10V (nC)
37
Typical Input Capacitance @ Vds (pF)
2785@50V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
4
Typical Rise Time (ns)
8.5
Typical Turn-Off Delay Time (ns)
29
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
7.9@10V|8.2@10V|9.4@6V|9.7@6V
Mounting
Through Hole
Package Height
9.14
Package Width
4.45
Package Length
10.03
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3