Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Process Technology
TMOS
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
152
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
6.5@10V
Typical Gate Charge @ Vgs (nC)
97@10V
Typical Gate Charge @ 10V (nC)
97
Typical Input Capacitance @ Vds (pF)
6460@75V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
14
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
67.5
Typical Turn-On Delay Time (ns)
18.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
5.1@10V|5.4@10V|5.6@6V|5.9@6V
Mounting
Through Hole
Package Height
9.14
Package Width
4.45
Package Length
10.03
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3
Order Quantity