Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±25
Maximum Continuous Drain Current (A)
28
Maximum Drain-Source Resistance (mOhm)
35@10V
Typical Gate Charge @ Vgs (nC)
24@10V
Typical Gate Charge @ 10V (nC)
24
Typical Input Capacitance @ Vds (pF)
1530@50V
Maximum Power Dissipation (mW)
56000
Typical Fall Time (ns)
4
Typical Rise Time (ns)
5.5
Typical Turn-Off Delay Time (ns)
16
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
27@10V|32@7V
Mounting
Surface Mount
Package Height
0.95(Max)
Package Width
5.55
Package Length
5.2
PCB changed
8
Standard Package Name
DFN
Supplier Package
DFN EP
Pin Count
8
Lead Shape
No Lead
Order Quantity