Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
EA
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.7
Maximum Continuous Drain Current (A)
1.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
400@10V
Typical Gate Charge @ Vgs (nC)
44@4.5V|82@10V
Typical Gate Charge @ 10V (nC)
82
Typical Input Capacitance @ Vds (pF)
328@100V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
3
Typical Rise Time (ns)
3.5
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
333@10V
Mounting
Surface Mount
Package Height
2.29
Package Width
6.1
Package Length
6.6
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Order Quantity