Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.5
Maximum Continuous Drain Current (A)
6.9
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
27@10V
Typical Gate Charge @ Vgs (nC)
6@4.5V
Typical Input Capacitance @ Vds (pF)
630@15V
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
4
Typical Rise Time (ns)
2.5
Typical Turn-Off Delay Time (ns)
25
Typical Turn-On Delay Time (ns)
3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
17.8@10V|19@4.5V|24@2.5V
Mounting
Surface Mount
Package Height
1.5
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing
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