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AFT18H35724SR6|NXP|simage
AFT18H35724SR6|NXP|limage
RF FETs

AFT18H357-24SR6

Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Mode of Operation
    1-Carrier W-CDMA
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    1.6
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    10
  • Maximum Output Power (W)
    63(Typ)
  • Typical Power Gain (dB)
    17.3
  • Maximum Frequency (MHz)
    1995
  • Minimum Frequency (MHz)
    1805
  • Typical Drain Efficiency (%)
    50.3
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    4.83(Max)
  • Package Width
    10.29(Max)
  • Package Length
    32.39(Max)
  • PCB changed
    7
  • Supplier Package
    NI-1230
  • Pin Count
    7

Documentation and Resources

Datasheets
Design resources