MOSFETs

ADP480120W3-L

Trans MOSFET N-CH SiC 1.2KV 488A Automotive AEC-Q100 39-Pin Tray

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  EA

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Hex

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  6

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  22

• Operating Junction Temperature (°C)

  -40 to 175

• Maximum Continuous Drain Current (A)

  488

• Maximum Drain-Source Resistance (mOhm)

  2.6@18V

• Typical Gate Charge @ Vgs (nC)

  1258@18V

• Typical Input Capacitance @ Vds (pF)

  37420@800V

• Maximum Power Dissipation (mW)

  869000

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tray

• Mounting

  Screw

• Package Length

  154.5

• PCB changed

  39

• Pin Count

  39