RF FETs

A3G26D055N-2400

Trans RF MOSFET 125V 6-Pin PDFN EP

NXP Semiconductors

Product Technical Specifications

• RoHS (Unione Europea)

  Not Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  9030.90.84.00

• Automotive

  No

• PPAP

  No

• Material

  GaN

• Channel Mode

  Depletion

• Mode of Operation

  1-Tone CW

• Maximum Drain-Source Voltage (V)

  125

• Maximum Gate-Source Voltage (V)

  0

• Maximum Output Power (W)

  8

• Typical Power Gain (dB)

  13.9

• Maximum Frequency (MHz)

  2690

• Minimum Frequency (MHz)

  100

• Typical Drain Efficiency (%)

  36.2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Surface Mount

• Package Height

  1.55(Max)

• Package Width

  7

• Package Length

  6.5

• PCB changed

  6

• Supplier Package

  PDFN EP

• Pin Count

  6