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3SK293TE85LF|TOSHIBA|simage
3SK293TE85LF|TOSHIBA|limage
RF FETs

3SK293(TE85L,F)

Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Material
    Si
  • Configuration
    Single Dual Gate
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    12.5
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    0.03
  • Typical Input Capacitance @ Vds (pF)
    2@6V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    16@6V
  • Maximum Power Dissipation (mW)
    100
  • Typical Power Gain (dB)
    22.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    125
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.95
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    4
  • Standard Package Name
    SOT
  • Supplier Package
    USQ
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources