Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Process Technology
pi-MOS IV
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
900
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
9
Maximum Gate-Source Leakage Current (nA)
10000
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
1300@10V
Typical Gate Charge @ Vgs (nC)
60@10V
Typical Gate Charge @ 10V (nC)
60
Typical Gate to Drain Charge (nC)
26
Typical Gate to Source Charge (nC)
34
Typical Reverse Recovery Charge (nC)
16000
Typical Input Capacitance @ Vds (pF)
2200@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
45@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
190
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Bag|Tube
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
27
Typical Reverse Recovery Time (ns)
1400
Maximum Diode Forward Voltage (V)
1.7
Mounting
Through Hole
Package Height
19
Package Width
4.5
Package Length
15.5
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-3PN
Pin Count
3