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2SJ360TE12LF|TOSHIBA|simage
2SJ360TE12LF|TOSHIBA|limage
MOSFETs

2SJ360(TE12L,F)

Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) PW-Mini T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    1
  • Maximum Drain-Source Resistance (mOhm)
    730@10V
  • Typical Gate Charge @ Vgs (nC)
    6.5@10V
  • Typical Gate Charge @ 10V (nC)
    6.5
  • Typical Input Capacitance @ Vds (pF)
    155@10V
  • Maximum Power Dissipation (mW)
    1500
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    17
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.6(Max) mm
  • Package Width
    2.5 mm
  • Package Length
    4.6(Max) mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    PW-Mini
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources