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2SC5886AT6L1NQ|TOSHIBA|simage
2SC5886AT6L1NQ|TOSHIBA|limage
GP BJT

2SC5886A(T6L1,NQ)

Trans GP BJT NPN 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    120
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    9
  • Maximum Base-Emitter Saturation Voltage (V)
    1.1@32mA@1.6A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.22@32mA@1.6A
  • Maximum DC Collector Current (A)
    5
  • Minimum DC Current Gain
    400@0.5A@2V|200@1.6A@2V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    5.5
  • Package Length
    6.5
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    New PW-Mold
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources