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2SB1204SE|ONSEMI|simage
2SB1204SE|ONSEMI|limage
GP BJT

2SB1204S-E

Trans GP BJT PNP 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    1.3@0.2A@4A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@0.2A@4A
  • Maximum DC Collector Current (A)
    8
  • Minimum DC Current Gain
    140@0.5A@2V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    5.5
  • Package Width
    2.3
  • Package Length
    6.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    IPAK
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources