GP BJT

2SA1312-BL(TE85L,F

Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R

Toshiba

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.21.00.75

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Small Signal

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  120

• Maximum Collector-Emitter Voltage (V)

  120

• Maximum Base-Emitter Voltage (V)

  5

• Operating Junction Temperature (°C)

  125

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@1mA@10mA

• Maximum DC Collector Current (A)

  0.1

• Minimum DC Current Gain

  350@2mA@6V

• Maximum Power Dissipation (mW)

  150

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  125

• Mounting

  Surface Mount

• Package Height

  1.1

• Package Width

  1.5

• Package Length

  2.9

• PCB changed

  3

• Standard Package Name

  SOT

• Supplier Package

  S-Mini

• Pin Count

  3

• Lead Shape

  Gull-wing