The ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L)
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Application:
• Servo motor control
• Power MOSFET gate drivers
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Small Signal
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.115
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
7500@10V
Typical Input Capacitance @ Vds (pF)
50(Max)@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
5(Max)@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
25(Max)
Maximum Power Dissipation (mW)
300
Typical Turn-Off Delay Time (ns)
40(Max)
Typical Turn-On Delay Time (ns)
20(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Maximum Positive Gate-Source Voltage (V)
20
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.225
Maximum Pulsed Drain Current @ TC=25°C (A)
0.8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
556
Maximum Diode Forward Voltage (V)
1.5
Mounting
Surface Mount
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing