Arrow Electronic Components Online
2N7002|ONSEMI|simage
2N7002|ONSEMI|limage
MOSFETs

2N7002

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R

onsemi
Datasheets 

The ON Semiconductor MOSFET have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This product can deliver pulsed currents up to 2A. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 200 mW. It has 1 number of elements per chip. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability

Application:
• Small servo motor control
• Power MOSFET gate drivers

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Process Technology
    Power Trench T1
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.115
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    7500@10V
  • Typical Gate Charge @ Vgs (nC)
    1@10V
  • Typical Gate Charge @ 10V (nC)
    1
  • Typical Input Capacitance @ Vds (pF)
    20@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    4@25V
  • Minimum Gate Threshold Voltage (V)
    1
  • Typical Output Capacitance (pF)
    11
  • Maximum Power Dissipation (mW)
    200
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1200@10V|1700@5V
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.8
  • Typical Diode Forward Voltage (V)
    0.88
  • Typical Gate Plateau Voltage (V)
    4.5
  • Maximum Diode Forward Voltage (V)
    1.5
  • Typical Gate Threshold Voltage (V)
    2.1
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.3
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources