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2N5686|MICROCHP|simage
2N5686|MICROCHP|limage
GP BJT

2N5686

Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-3 Tray

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    80
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    2@2.5A@25A
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@2.5A@25A|5@10A@50A
  • Maximum DC Collector Current (A)
    50
  • Minimum DC Current Gain
    30@5A@2V|15@25A@2V|5@50A@5V
  • Maximum Power Dissipation (mW)
    300000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Tray
  • Mounting
    Through Hole
  • Package Height
    7.92
  • Package Width
    26.42
  • Package Length
    39.29
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-3
  • Pin Count
    3
  • Lead Shape
    Through Hole
Order Quantity

Documentation and Resources

Datasheets
Design resources