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2N5551|DIOTCSEM|simage
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GP BJT

2N5551

Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Ammo

Diotec Semiconductor AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.75
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    180
  • Maximum Collector-Emitter Voltage (V)
    160
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    1@1mA@10mA|1@5mA@50mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.15@1mA@10mA|0.2@5mA@50mA
  • Maximum DC Collector Current (A)
    0.6
  • Maximum Collector Cut-Off Current (nA)
    50
  • Minimum DC Current Gain
    80@1mA@5V|80@10mA@5V|30@50mA@5V
  • Maximum Power Dissipation (mW)
    625
  • Maximum Transition Frequency (MHz)
    300
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Ammo
  • Mounting
    Through Hole
  • Package Height
    4.6 mm
  • Package Width
    3.6 mm
  • Package Length
    4.6 mm
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources