GP BJT

2N3501UB

Trans GP BJT NPN 150V 0.3A 500mW 4-Pin Case UB Waffle

Microchip Technology

Product Technical Specifications

• EU RoHS

  Not Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  150

• Maximum Collector-Emitter Voltage (V)

  150

• Maximum Base-Emitter Voltage (V)

  6

• Maximum Base-Emitter Saturation Voltage (V)

  0.8@1mA@10mA|1.2@15mA@150mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.2@1mA@10mA|0.4@15mA@150mA

• Maximum DC Collector Current (A)

  0.3

• Minimum DC Current Gain

  35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Waffle

• Supplier Temperature Grade

  Commercial

• Mounting

  Surface Mount

• Package Height

  1.42(Max)

• Package Width

  2.74(Max)

• Package Length

  3.25(Max)

• PCB changed

  4

• Supplier Package

  Case UB

• Pin Count

  4