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RF BJT

2N2857 TIN/LEAD

Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72

Central Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    30
  • Maximum Collector-Emitter Voltage (V)
    15
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    2.5
  • Maximum DC Collector Current (A)
    0.04
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Collector Cut-Off Current (nA)
    10
  • Operational Bias Conditions
    10V/12mA
  • Minimum DC Current Gain
    30@3mA@1V
  • Minimum DC Current Gain Range
    30 to 50
  • Typical Output Capacitance (pF)
    1(Max)
  • Maximum Power Dissipation (mW)
    200
  • Maximum Output Power (W)
    0.03(Min)
  • Typical Power Gain (dB)
    19(Max)
  • Maximum Transition Frequency (MHz)
    1900
  • Maximum Noise Figure (dB)
    4.5
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Diameter
    5.84(Max)
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • PCB changed
    4
  • Standard Package Name
    TO
  • Supplier Package
    TO-72
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources