4N26SM|ONSEMI|limage
4N26SM|ONSEMI|simage
트랜지스터 및 광전지 출력 광결합체

4N26SM

DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD Bag

onsemi
Datenblätter 

Produktspezifikationen
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.49.80.00
  • Automotive
    No
  • PPAP
    No
  • Output Type
    DC
  • Input Type
    DC
  • Output Device
    Transistor With Base
  • Number of Channels per Chip
    1
  • Minimum Isolation Voltage (Vrms)
    4170
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    100
  • Maximum Forward Voltage (V)
    1.5
  • Maximum Collector-Emitter Voltage (V)
    30
  • Standard
    UL
  • Maximum Collector-Emitter Saturation Voltage (mV)
    500
  • Maximum Power Dissipation (mW)
    250
  • Typical Forward Voltage (V)
    1.18
  • Maximum Reverse Voltage (V)
    6
  • Maximum Forward Current (mA)
    60
  • Packaging
    Bag
  • Minimum Current Transfer Ratio (%)
    20
  • Current Transfer Ratio Test Current (mA)
    10
  • Mounting
    Surface Mount
  • Package Height
    3.4 mm
  • Package Width
    6.35 mm
  • Package Length
    8.51 mm
  • PCB changed
    6
  • Standard Package Name
    DIP
  • Supplier Package
    PDIP SMD
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen