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onsemi EliteSiC addresses the needs of demanding applications like solar inverters, electric vehicle chargers, and uninterruptible power supplies. The devices are a comprehensive portfolio of energy efficient Silicon Carbide (SiC) Diodes, MOSFETs, Modules, and Gate Drivers.
Download the onsemi SiC Brochure
Key Features and Benefits
- • Proven quality/robust planar design
- • In-process control and burn-in
- • Defect scanning during manufacturing
- • 100% Avalanche testing of all dies
- • No drift in threshold or parameters
- • High-reliability gate oxide
- • Automotive Qualification AECQ-100
- • Best-in-class design tools
- • Physical and scalable accurate simulation models
- • Application notes and design guides
- • Fully integrated manufacturing
- • Form powder to products
- • Automotive or industrial grade for all values and packages
- • 3rd generation SiC offering
- • Optimized for high-temperature operation
- • Diodes, low series-resistance temperature dependency
- • MOSFETs, stable reverse recovery over temperature
- • Improved parasitic capacitances for high-frequency high-efficiency application
- • Large die with low RDS(on) available
- • Wide offering in standard and custom Power Integrated Modules (PIM)
- • Large portfolio of voltages and RSD(on) available in 3- and 4-leads packages
Applications
- • Energy Storage
- • Uninterruptable power supplies (UPS)
- • AC/DC Power Conversion
- • Solar Inverter
- • Traction Inverter
- • On-Board Charger
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Especificaciones técnicas del producto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Hex Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
22
Maximum Continuous Drain Current (A)
145
Maximum Drain-Source Resistance (mOhm)
15.34(Typ)@18V
Typical Gate Charge @ Vgs (nC)
283@18V
Typical Gate Charge @ 10V (nC)
283
Typical Input Capacitance @ Vds (pF)
5516@325V
Maximum Power Dissipation (mW)
500000
Typical Fall Time (ns)
13.48
Typical Rise Time (ns)
14.32
Typical Turn-Off Delay Time (ns)
69.3
Typical Turn-On Delay Time (ns)
48.65
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
4.5
Package Width
9.2
Package Length
9.9
PCB changed
7
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
8
Family/Series
NTBG015N065SC1
ROHS Version
2011/65/EU, 2015/863
MSL
1
Cantidad de Pedido