IGBT 模块

FF600R12KT4HOSA1

Trans IGBT Module N-CH 1200V 600A 7-Pin Tray

Infineon Technologies AG

产品技术规范

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  EA

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Dual

• Typical Collector-Emitter Saturation Voltage (V)

  1.75

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  600

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Mounting

  Screw

• Package Height

  29

• Package Width

  61.4

• Package Length

  106.4

• PCB changed

  7

• Pin Count

  7