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ZTX869|DIODEZTX|simage
ZTX869|DIODEZTX|limage
GP BJT

ZTX869

Trans GP BJT NPN 25V 5A 1200mW 3-Pin E-Line

Diodes Incorporated
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    LTB
  • 미국 세관 상품 코드
    8541.29.00.55
  • SVHC
    Yes
  • SVHC 기준 초과
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    25
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    0.95@100mA@5A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.05@10mA@0.5A|0.08@10mA@1A|0.2@100mA@2A|0.22@100mA@5A
  • Maximum DC Collector Current (A)
    5
  • Maximum Collector Cut-Off Current (nA)
    50
  • Minimum DC Current Gain
    300@10mA@1V|300@1A@1V|250@5A@1V|40@20A@1V
  • Maximum Power Dissipation (mW)
    1200
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    200
  • Mounting
    Through Hole
  • Package Height
    4.01(Max)
  • Package Width
    2.41(Max)
  • Package Length
    4.77(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    E-Line
  • Pin Count
    3
  • Lead Shape
    Through Hole
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