GP BJT

TTA004B,Q(S

Trans GP BJT PNP 160V 1.5A 1500mW 3-Pin TO-126N Sack

Toshiba

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  NRND

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  160

• Maximum Collector-Emitter Voltage (V)

  160

• Maximum Base-Emitter Voltage (V)

  6

• Maximum Base-Emitter Saturation Voltage (V)

  1.3@50mA@0.5A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.5@50mA@0.5A

• Maximum DC Collector Current (A)

  1.5

• Maximum Collector Cut-Off Current (nA)

  100

• Minimum DC Current Gain

  80@1mA@5V|140@0.1A@5V

• Maximum Power Dissipation (mW)

  1500

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Sack

• Mounting

  Through Hole

• Package Height

  11

• Package Width

  3.25

• Package Length

  8

• PCB changed

  3

• Supplier Package

  TO-126N

• Pin Count

  3