제품 기술 사양
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
NRND
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
900
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
9
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
1300@10V
Typical Gate Charge @ Vgs (nC)
46@10V
Typical Gate Charge @ 10V (nC)
46
Typical Input Capacitance @ Vds (pF)
2000@25V
Maximum Power Dissipation (mW)
50000
Typical Fall Time (ns)
35
Typical Rise Time (ns)
40
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Through Hole
Package Height
15
Package Width
4.5
Package Length
10
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220SIS
Pin Count
3