제품 기술 사양
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
EA
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±25
Maximum Gate Threshold Voltage (V)
4.75
Maximum Continuous Drain Current (A)
38
Maximum Gate-Source Leakage Current (nA)
5000
Maximum IDSS (uA)
5
Maximum Drain-Source Resistance (mOhm)
71@10V
Typical Gate Charge @ Vgs (nC)
54@10V
Typical Gate Charge @ 10V (nC)
54
Typical Input Capacitance @ Vds (pF)
2500@100V
Maximum Power Dissipation (mW)
250000
Typical Fall Time (ns)
9
Typical Rise Time (ns)
22
Typical Turn-Off Delay Time (ns)
56
Typical Turn-On Delay Time (ns)
21
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Industrial
Packaging
Tube
Mounting
Through Hole
Package Height
20.15(Max)
Package Width
5.15(Max)
Package Length
15.75(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole