STB13N80K5|STMICRO|simage
STB13N80K5|STMICRO|limage
MOSFET

STB13N80K5

Trans MOSFET N-CH 800V 12A 3-Pin(2+Tab) D2PAK T/R

STMicroelectronics
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제품 기술 사양
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    12
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    450@10V
  • Typical Gate Charge @ Vgs (nC)
    29@10V
  • Typical Gate Charge @ 10V (nC)
    27
  • Typical Input Capacitance @ Vds (pF)
    870@100V
  • Maximum Power Dissipation (mW)
    190000
  • Typical Fall Time (ns)
    16
  • Typical Rise Time (ns)
    16
  • Typical Turn-Off Delay Time (ns)
    42
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.6(Max)
  • Package Width
    9.35(Max)
  • Package Length
    10.4(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

문서 및 자료

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