MOSFET

SSM6N7002CFU,LF

Trans MOSFET N-CH Si 60V 0.17A 6-Pin US T/R

Toshiba

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Small Signal

• Material

  Si

• Configuration

  Dual

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2.1

• Maximum Continuous Drain Current (A)

  0.17

• Maximum Gate-Source Leakage Current (nA)

  2000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  3900@10V

• Typical Gate Charge @ Vgs (nC)

  0.27@4.5V

• Typical Input Capacitance @ Vds (pF)

  11@10V

• Maximum Power Dissipation (mW)

  285

• Typical Fall Time (ns)

  24

• Typical Rise Time (ns)

  3

• Typical Turn-Off Delay Time (ns)

  7

• Typical Turn-On Delay Time (ns)

  2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.9

• Package Width

  1.25

• Package Length

  2

• PCB changed

  6

• Supplier Package

  US

• Pin Count

  6