MOSFET

SSM6J801R,LF

Trans MOSFET P-CH SiC 20V 6A 6-Pin TSOP-F T/R

Toshiba

제품 기술 사양

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Quad Drain

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  20

• Maximum Gate-Source Voltage (V)

  6

• Maximum Continuous Drain Current (A)

  6

• Maximum Drain-Source Resistance (mOhm)

  32.5@4.5V

• Typical Gate Charge @ Vgs (nC)

  12.8@4.5V

• Typical Input Capacitance @ Vds (pF)

  840@10V

• Maximum Power Dissipation (mW)

  3000

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.8

• Package Width

  2.2

• Package Length

  2.9

• PCB changed

  6

• Standard Package Name

  SO

• Supplier Package

  TSOP-F

• Pin Count

  6