SIAA40DJT1GE3|VISHAY|simage
SIAA40DJT1GE3|VISHAY|limage
MOSFET

SIAA40DJ-T1-GE3

Trans MOSFET N-CH 40V 30A 6-Pin PowerPAK SC-70 EP T/R

Vishay
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    2.4
  • Maximum Continuous Drain Current (A)
    30
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    12.5@10V
  • Typical Gate Charge @ Vgs (nC)
    7.7@4.5V|16@10V
  • Typical Gate Charge @ 10V (nC)
    16
  • Typical Input Capacitance @ Vds (pF)
    1200@20V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    22|8
  • Typical Rise Time (ns)
    45|21
  • Typical Turn-Off Delay Time (ns)
    11|13
  • Typical Turn-On Delay Time (ns)
    13|6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    2.05
  • Package Length
    2.05
  • PCB changed
    6
  • Supplier Package
    PowerPAK SC-70 EP
  • Pin Count
    6

문서 및 자료

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