제품 기술 사양
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Process Technology
0.18um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.5
Maximum Continuous Drain Current (A)
8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
18@4.5V
Typical Gate Charge @ Vgs (nC)
10@4.5V|22@10V
Typical Gate Charge @ 10V (nC)
22
Typical Gate to Drain Charge (nC)
1.7
Typical Gate to Source Charge (nC)
2.5
Typical Reverse Recovery Charge (nC)
10
Typical Input Capacitance @ Vds (pF)
1200@10V
Typical Output Capacitance (pF)
220
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
10|12
Typical Rise Time (ns)
10|12
Typical Turn-Off Delay Time (ns)
25|35
Typical Turn-On Delay Time (ns)
10|15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
15@4.5V|17@2.5V
Mounting
Surface Mount
Package Height
1.55(Max)
Package Width
4(Max)
Package Length
5(Max)
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC N
Pin Count
8
Lead Shape
Gull-wing
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