제품 기술 사양
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Process Technology
0.18um
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
29@10V
Typical Gate Charge @ Vgs (nC)
15@4.5V|32@10V
Typical Gate Charge @ 10V (nC)
32
Typical Gate to Drain Charge (nC)
7.5
Typical Gate to Source Charge (nC)
4
Typical Reverse Recovery Charge (nC)
22
Typical Input Capacitance @ Vds (pF)
1350@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
185@15V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
215
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
12|16
Typical Rise Time (ns)
8|35
Typical Turn-Off Delay Time (ns)
40|45
Typical Turn-On Delay Time (ns)
10|42
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
24@10V|33@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.5
Maximum Pulsed Drain Current @ TC=25°C (A)
32
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
85
Typical Diode Forward Voltage (V)
0.75
Typical Gate Plateau Voltage (V)
3.4
Typical Reverse Recovery Time (ns)
34
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
7.3
Mounting
Surface Mount
Package Height
1.38
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC N
Pin Count
8
Lead Shape
Gull-wing
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