RS1G180MNTB|ROHM|simage
RS1G180MNTB|ROHM|limage
MOSFET

RS1G180MNTB

Trans MOSFET N-CH 40V 18A 8-Pin HSOP EP T/R

ROHM Semiconductor
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제품 기술 사양
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    18
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    7@10V
  • Typical Gate Charge @ Vgs (nC)
    19.5@10V|9.5@4.5V
  • Typical Gate Charge @ 10V (nC)
    19.5
  • Typical Input Capacitance @ Vds (pF)
    1293@20V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    8.4
  • Typical Rise Time (ns)
    8.9
  • Typical Turn-Off Delay Time (ns)
    48
  • Typical Turn-On Delay Time (ns)
    14.1
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.8(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    HSOP EP
  • Pin Count
    8
  • Lead Shape
    Gull-wing

문서 및 자료

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