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MPSW06RLRAG|ONSEMI|simage
MPSW06RLRAG|ONSEMI|limage
GP BJT

MPSW06RLRAG

Trans GP BJT NPN 80V 0.5A 1000mW 3-Pin TO-92 T/R

onsemi
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μ œν’ˆ 기술 사양
  • 유럽 μ—°ν•© RoHS λͺ…λ Ήμ–΄
    Compliant
  • λ―Έκ΅­μˆ˜μΆœν†΅μ œλΆ„λ₯˜ECCN 인코딩
    EAR99
  • μΉœν™˜κ²½ 무연
    Obsolete
  • λ―Έκ΅­ μ„Έκ΄€ μƒν’ˆ μ½”λ“œ
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    80
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    4
  • Operating Junction Temperature (Β°C)
    -55 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@250mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@10mA@250mA
  • Maximum DC Collector Current (A)
    0.5
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    80@50mA@1V|60@250mA@1V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (Β°C)
    -55
  • Maximum Operating Temperature (Β°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Through Hole
  • Package Height
    7.87(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.21(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Through Hole

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