GP BJT

JANTXV2N2222AUB

Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB

Semicoa Semiconductors

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Maximum Collector-Base Voltage (V)

  75

• Maximum Collector-Emitter Voltage (V)

  50

• Maximum Base-Emitter Voltage (V)

  6

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@15mA@150mA|2@50mA@500mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@15mA@150mA|1@50mA@500mA

• Maximum DC Collector Current (A)

  0.8

• Minimum DC Current Gain

  50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Mounting

  Surface Mount

• Package Height

  1.42(Max) mm

• Package Width

  2.74(Max) mm

• Package Length

  3.25(Max) mm

• PCB changed

  4

• Supplier Package

  Case UB

• Pin Count

  4