GP BJT

JANTX2N4150

Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-5

Semicoa Semiconductors

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Obsolete

• 미국 세관 상품 코드

  JANTX2N4150

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  100

• Maximum Collector-Emitter Voltage (V)

  70

• Maximum Base-Emitter Voltage (V)

  10

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  1.5@500mA@5A|2.5@1A@10A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.6@500mA@5A|2.5@1A@10A

• Maximum DC Collector Current (A)

  10

• Maximum Collector Cut-Off Current (nA)

  10000

• Minimum DC Current Gain

  50@1A@5V|40@5A@5V|10@10A@5V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-5

• Pin Count

  3