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GP BJT

JANSF2N2222A

Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18

Semicoa Semiconductors
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제품 기술 사양
  • RoHS (Unione Europea)
    Not Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active-Unconfirmed
  • Codice HTS
    EA
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    75
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -65 to 200
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@15mA@150mA|2@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3@15mA@150mA|1@50mA@500mA
  • Maximum DC Collector Current (A)
    0.8
  • Minimum DC Current Gain
    50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
  • Maximum Power Dissipation (mW)
    500
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Diameter
    5.84(Max)
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-18
  • Pin Count
    3
  • Lead Shape
    Through Hole
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