제품 기술 사양
유럽 연합 RoHS 명령어
Compliant with Exemption
미국수출통제분류ECCN 인코딩
EAR99
친환경 무연
Active
미국 세관 상품 코드
COMPONENTS
SVHC
Yes
SVHC 기준 초과
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
500
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
1000@10V
Typical Gate Charge @ Vgs (nC)
50@10V
Typical Gate Charge @ 10V (nC)
50
Typical Gate to Drain Charge (nC)
18
Typical Gate to Source Charge (nC)
17
Typical Reverse Recovery Charge (nC)
5900
Typical Input Capacitance @ Vds (pF)
2840@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
42@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
275
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
44
Typical Rise Time (ns)
28
Typical Turn-Off Delay Time (ns)
52
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Pulsed Drain Current @ TC=25°C (A)
30
Typical Gate Plateau Voltage (V)
4.7
Typical Reverse Recovery Time (ns)
414
Maximum Diode Forward Voltage (V)
3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
21.46(Max) mm
Package Width
5.3(Max) mm
Package Length
16.26(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3