제품 기술 사양
RoHS (Unione Europea)
Compliant
Stato del componente
Active
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.3
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
5.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
27@10V
Typical Gate Charge @ Vgs (nC)
2.6@4.5V
Typical Gate to Drain Charge (nC)
1.1
Typical Gate to Source Charge (nC)
0.8
Typical Reverse Recovery Charge (nC)
4
Typical Input Capacitance @ Vds (pF)
382@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
39@15V
Minimum Gate Threshold Voltage (V)
1.3
Typical Output Capacitance (pF)
84
Maximum Power Dissipation (mW)
1300
Typical Fall Time (ns)
4.4
Typical Rise Time (ns)
4.4
Typical Turn-Off Delay Time (ns)
7.4
Typical Turn-On Delay Time (ns)
5.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
22@10V|33@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
21
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
100
Typical Gate Plateau Voltage (V)
2.8
Typical Reverse Recovery Time (ns)
11
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
1.7
Maximum Positive Gate-Source Voltage (V)
20
주문 수량