MOSFET

IRFB7530PBF

Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG

제품 기술 사양

• RoHS (Unión Europea)

  Compliant with Exemption

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Obsolete

• Código HTS

  8541.29.00.55

• SVHC

  Yes

• Índice de SEP por encima del límite autorizado

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.7

• Maximum Continuous Drain Current (A)

  295

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  2@10V

• Typical Gate Charge @ Vgs (nC)

  274@10V

• Typical Gate Charge @ 10V (nC)

  274

• Typical Input Capacitance @ Vds (pF)

  13703@25V

• Maximum Power Dissipation (mW)

  375000

• Typical Fall Time (ns)

  104

• Typical Rise Time (ns)

  141

• Typical Turn-Off Delay Time (ns)

  172

• Typical Turn-On Delay Time (ns)

  52

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  1.65@10V, 2.1@6V

• Mounting

  Through Hole

• Package Height

  9.02(Max)

• Package Width

  4.83(Max)

• Package Length

  10.67(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole

• Family/Series

  IRFB7530

• ALIAS

  SP001575524

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  1000