IRF8788TRPBF|INFINEON|simage
IRF8788TRPBF|INFINEON|limage
MOSFET

IRF8788TRPBF

Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

Infineon Technologies AG
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    NRND
  • 미국 세관 상품 코드
    COMPONENTS
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    24
  • Maximum Drain-Source Resistance (mOhm)
    2.8@10V
  • Typical Gate Charge @ Vgs (nC)
    44@4.5V
  • Typical Gate to Drain Charge (nC)
    14
  • Typical Input Capacitance @ Vds (pF)
    5720@15V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    24
  • Typical Turn-Off Delay Time (ns)
    23
  • Typical Turn-On Delay Time (ns)
    23
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.38
  • Package Width
    3.9
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

문서 및 자료

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