MOSFET

IRF630NSTRLPBF

Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG

제품 기술 사양

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  IRF630NSTRLPBF

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  200

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Maximum Continuous Drain Current (A)

  9.3

• Maximum Drain-Source Resistance (mOhm)

  300@10V

• Typical Gate Charge @ Vgs (nC)

  35(Max)@10V

• Typical Gate Charge @ 10V (nC)

  35(Max)

• Typical Input Capacitance @ Vds (pF)

  575@25V

• Maximum Power Dissipation (mW)

  82000

• Typical Fall Time (ns)

  15

• Typical Rise Time (ns)

  14

• Typical Turn-Off Delay Time (ns)

  27

• Typical Turn-On Delay Time (ns)

  7.9

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.83(Max)

• Package Width

  9.65(Max)

• Package Length

  10.67(Max)

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  3

• Lead Shape

  Gull-wing