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MOSFET

IRF3205PBF

Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG

제품 기술 사양

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  COMPONENTS

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  55

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  110

• Maximum Drain-Source Resistance (mOhm)

  8@10V

• Typical Gate Charge @ Vgs (nC)

  146(Max)@10V

• Typical Gate Charge @ 10V (nC)

  146(Max)

• Typical Gate to Drain Charge (nC)

  36

• Typical Input Capacitance @ Vds (pF)

  3247@25V

• Maximum Power Dissipation (mW)

  200000

• Typical Fall Time (ns)

  65

• Typical Rise Time (ns)

  101

• Typical Turn-Off Delay Time (ns)

  50

• Typical Turn-On Delay Time (ns)

  14

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  9.02(Max)

• Package Width

  4.83(Max)

• Package Length

  10.67(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole