MOSFET

IPP120N08S403AKSA1

Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101

Infineon Technologies AG

제품 기술 사양

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  NRND

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Maximum Continuous Drain Current (A)

  120

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  2.8@10V

• Typical Gate Charge @ Vgs (nC)

  128@10V

• Typical Gate Charge @ 10V (nC)

  128

• Typical Input Capacitance @ Vds (pF)

  8884@25V

• Maximum Power Dissipation (mW)

  278000

• Typical Fall Time (ns)

  50

• Typical Rise Time (ns)

  15

• Typical Turn-Off Delay Time (ns)

  60

• Typical Turn-On Delay Time (ns)

  30

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  2.1@10V|2.4@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  480

• Mounting

  Through Hole

• Package Height

  9.25

• Package Width

  4.4

• Package Length

  10

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220

• Pin Count

  3

• Lead Shape

  Through Hole