MOSFET

IPB180P04P4L02ATMA2

Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101

Infineon Technologies AG

제품 기술 사양

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quint Source

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  5

• Maximum Gate Threshold Voltage (V)

  2.2

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  180

• Maximum Drain-Source Resistance (mOhm)

  2.4@10V

• Typical Gate Charge @ Vgs (nC)

  220@10V

• Typical Gate Charge @ 10V (nC)

  220

• Typical Input Capacitance @ Vds (pF)

  14400@25V

• Maximum Power Dissipation (mW)

  150000

• Typical Fall Time (ns)

  119

• Typical Rise Time (ns)

  28

• Typical Turn-Off Delay Time (ns)

  146

• Typical Turn-On Delay Time (ns)

  32

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Maximum Pulsed Drain Current @ TC=25°C (A)

  720

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  6

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  7